腐蚀法制备碳化硅量子点标记材料及其光学性能_中国硅酸盐学会 - 精品期刊
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腐蚀法制备碳化硅量子点标记材料及其光学性能
2014-03-21 | 编辑:enablesite | 【
1,2,宋月鹏1,2,3,高东升2,3,朱彦敏1,2,毛志泉2,3,孙祥鸣1,2,尹承苗2,贾  1,2KIM Hyoungseop4
(1. 山东农业大学机械与电子工程学院,山东 泰安 2710182. 山东省园艺机械与装备重点实验室,山东 泰安 2710183. 山东农业大学园艺学院,山东 泰安 2710184. 浦项工科大学材料科学与工程学院,韩国 浦项 790784)
 
  要:以硝酸和氢氟酸为腐蚀液对自蔓延燃烧合成的纳米均质碳化硅颗粒进行腐蚀,而后进行超声空化破碎分散及高速离心处理,获得无细胞毒性的碳化硅量子点标记材料,对其微观结构的演变过程及光学性能进行检测,对出芽短梗霉菌(Aureobasidium pulluans)活体细胞进行标记并长时程荧光成像。结果表明,自蔓延合成的SiC粉体颗粒极易腐蚀成网格状镂空结构,超声空化破碎及高速离心层析剪裁后获得尺寸高度单分散的碳化硅量子点(约为12.5 nm),小于体材料的激子Bohr直径(5.4 nm),会产生强烈的光致发光效应。活体细胞标记及荧光成像结果表明,腐蚀法制备出的碳化硅量子点具有较高的生物相容性,同时对其标记及长时程荧光成像原理进行了初步探讨。
 
关键词:化学腐蚀;碳化硅量子点;光致发光;活体细胞标记;出芽短梗霉菌
中图分类号:O482O614    文献标志码:A    文章编号:0454–5648(2013)12–1714–06
网络出版时间:2013–11–29  13:42:00    网络出版地址:http://www.cnki.net/kcms/detail/11.2310.TQ.20131129.1342.201312.1714_020.html
 
Fabrication of Silicon Carbide Quantum Dots (QDs) for Labeling Living Cell via Chemical Etching Method and Its Optical Properties
 
KANG Jie1,2SONG Yuepeng1,2,3GAO Dongsheng2,3ZHU Yanmin1,2MAO Zhiquan2,3SUN Xiangming1,2
YIN Chengmiao2JIA Hao1,2KIM Hyoungseop4
(1. Mechanical and Electronic Engineering College, Shandong Agricultural University, Tai’an 271018, Shandong, China; 2. Shandong Provincial Key Laboratory of Horticultural Machineries and Equipments Shandong Agricultural University, Tai’an 271018, China; 3. College of Horticulture and Engineering, Shandong Agricultural University, Tai’an 271018, Shandong, China; 4. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790784, Korea)
 
Abstract: Silicon carbide nanoparticles fabricated via self-propagating high-temperature synthesis (SHS) were etched in the mixture solution of nitric and hydrofluoric acid. The non-cytotoxic labeling material of silicon carbide quantum dots (QDs) were prepared by ultrasonic cavitation and high-speed centrifugation. The microstructure and optical performance of SiC QDs were analyzed. The living cell of Aureobasidium pulluans was labeled and observed by long-term-distance fluorescence imaging analysis. The results show that the SiC particles prepared by SHS are formed as a grid-like hollow structure in the mixture acid solution. The SiC QDs in the size range from 1 to 2.5 nm were fabricated by cavitation crushing with ultrasound and chromatography with high-speed centrifugal force, leading to the size of less than the corresponding exciton Bohr diameter (5.4 nm) for the intensive photoluminescence. Moreover, the SiC QDs prepared have a superior biocompatibility. In addition, the mechanism on the labeling and long-term-distance fluorescence imaging analysis of the living cells was also discussed.
 
Key words: chemical etching; silicon carbide quantum dots; photoluminescence; labeling living cells; Aureobasidium pulluanssilicon

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